• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 11
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Noise Figure
Voltage - Test
Current - Test
NE3515S02-A FET RF HFET 12GHZ 2V 10MA S02 CEL S02 14dBm 12GHz 4V 88mA 4-SMD, Flat Leads HFET 12.5dB 0.3dB 2V 10mA
NE3516S02-T1C-A IC HJ-FET RF N-CH S02 4-MICROX CEL S02 165mW 12GHz 4V 60mA 4-SMD, Flat Leads N-Channel GaAs HJ-FET 14dB 0.35dB 2V 10mA
NE3515S02-T1C-A FET RF HFET 12GHZ 2V 10MA S02 CEL S02 14dBm 12GHz 4V 88mA 4-SMD, Flat Leads HFET 12.5dB 0.3dB 2V 10mA
NE3511S02-T1C-A IC AMP RF LNA 13.5DB S02 CEL S02 12GHz 4V 70mA 4-SMD, Flat Leads HFET 13.5dB 0.3dB 2V 10mA
NE3511S02-A HJ-FET NCH 13.5DB S02 CEL S02 12GHz 4V 70mA 4-SMD, Flat Leads HFET 13.5dB 0.3dB 2V 10mA
NE3512S02-A HJ-FET NCH 13.5DB S02 CEL S02 12GHz 4V 70mA 4-SMD, Flat Leads HFET 13.5dB 0.35dB 2V 10mA
NE3516S02-A IC HJ-FET RF N-CH S02 4-MICROX CEL S02 165mW 12GHz 4V 60mA 4-SMD, Flat Leads N-Channel GaAs HJ-FET 14dB 0.35dB 2V 10mA
NE3515S02-T1D-A FET RF HFET 12GHZ 2V 10MA S02 CEL S02 14dBm 12GHz 4V 88mA 4-SMD, Flat Leads HFET 12.5dB 0.3dB 2V 10mA
NE3512S02-T1C-A HJ-FET NCH 13.5DB S02 CEL S02 12GHz 4V 70mA 4-SMD, Flat Leads HFET 13.5dB 0.35dB 2V 10mA
NE3514S02-A HJ-FET NCH 10DB S02 CEL S02 20GHz 4V 70mA 4-SMD, Flat Leads HFET 10dB 0.75dB 2V 10mA
NE3514S02-T1C-A HJ-FET NCH 10DB S02 CEL S02 20GHz 4V 70mA 4-SMD, Flat Leads HFET 10dB 0.75dB 2V 10mA
  • 10
  • 15
  • 50
  • 100