-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
---|---|---|---|---|---|---|---|---|---|
B11G1822N60DYZ | B11G1822N60DYZ/PQFN-12X7/REELDP | Ampleon USA Inc. | 36-PQFN (12x7) | 1.8GHz ~ 2.2GHz | 65V | 1.4µA | 36-QFN Exposed Pad | LDMOS (Dual) | 32dB |
B11G3338N80DYZ | B11G3338N80DYZ/PQFN-12X7/REELDP | Ampleon USA Inc. | 36-PQFN (12x7) | 3.3GHz ~ 3.8GHz | 65V | 1.4µA | 36-QFN Exposed Pad | LDMOS | 38dB |
B11G2327N70DYZ | B11G2327N70DYZ/PQFN-12X7/REELDP | Ampleon USA Inc. | 36-PQFN (12x7) | 2.3GHz ~ 2.7GHz | 65V | 1.4µA | 36-QFN Exposed Pad | LDMOS (Dual) | 30.3dB |
- 10
- 15
- 50
- 100