-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
BLP8G27-10Z | RF FET LDMOS 65V 17DB 16VDFN | Ampleon USA Inc. | 16-HVSON (6x4) | 2W | 2.14GHz | 65V | 16-VDFN Exposed Pad | LDMOS (Dual), Common Source | 17dB | 28V | 110mA |
BLP35M805Z | RF FET LDMOS 65V 18DB 16VDFN | Ampleon USA Inc. | 16-HVSON (6x4) | 750mW | 2.14GHz | 65V | 16-VDFN Exposed Pad | LDMOS | 18dB | 28V | 55mA |
BLP27M810Z | RF FET LDMOS 65V 17DB 16VDFN | Ampleon USA Inc. | 16-HVSON (6x4) | 2W | 2.14GHz | 65V | 16-VDFN Exposed Pad | LDMOS (Dual), Common Source | 17dB | 28V | 110mA |
BLP8G27-5Z | RF FET LDMOS 65V 18DB 16VDFN | Ampleon USA Inc. | 16-HVSON (6x4) | 750mW | 2.14GHz | 65V | 16-VDFN Exposed Pad | LDMOS | 18dB | 28V | 55mA |
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