Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.3A Pmax 700mW
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
- Power - Max: 700mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.3A
- Voltage - Collector Emitter Breakdown (Max): 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
- Frequency - Transition: 4MHz
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