Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 100mA Pmax 410mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 1
  • BC846BLP4-7B
    TRANS NPN 65V 0.1A 3DFN
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 3-XFDFN
    • Supplier Device Package: X2-DFN1006-3
    • Power - Max: 410mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 65V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
    • Current - Collector Cutoff (Max): 15nA
    • Frequency - Transition: 300MHz
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