Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 200mA Pmax 370mW

Found: 1
  • TRANS NPN/PNP 40V 200MA 6DFN
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-XFDFN Exposed Pad
    • Supplier Device Package: X2-DFN1310-6 (Type B)
    • Power - Max: 370mW
    • Transistor Type: NPN, PNP Complementary
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 50nA
    • Frequency - Transition: 300MHz
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