Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1A Pmax 325mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 6
  • PBSS4130QAZ
    NEXPERIA PBSS4130QA - 30 V, 1 A
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 325mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 190MHz
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  • PBSS4130QAZ
    TRANS NPN 30V 1A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 325mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 190MHz
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  • PBSS5160QAZ
    PBSS5160QA - 60 V, 1 A PNP LOW V
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 325mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 150MHz
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  • PBSS5160QAZ
    TRANS PNP 60V 1A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 325mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 150MHz
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  • PBSS5130QAZ
    SMALL SIGNAL BIPOLAR TRANSISTOR
    NXP Semiconductors
    • Manufacturer: NXP Semiconductors
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 325mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 170MHz
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  • PBSS5130QAZ
    TRANS PNP 30V 1A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 325mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 170MHz
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