Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.7A Pmax 325mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 1
  • PBSS5260QAZ
    TRANS PNP 60V 1.7A DFN1010D-3
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-XDFN Exposed Pad
    • Supplier Device Package: DFN1010D-3
    • Power - Max: 325mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.7A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 150MHz
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100