Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 150mA Pmax 320mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 4
  • TBC857B,LM
    TRANS PNP 50V 0.15A SOT23-3
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 320mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA
    • Current - Collector Cutoff (Max): 30nA (ICBO)
    • Frequency - Transition: 80MHz
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  • TBC847B,LM
    TRANS NPN 50V 0.15A SOT23-3
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 320mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 5mA
    • Current - Collector Cutoff (Max): 30nA (ICBO)
    • Frequency - Transition: 100MHz
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  • TMBT3904,LM
    TRANS NPN 50V 0.15A SOT23-3
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 320mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 300MHz
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  • TMBT3906,LM
    TRANS PNP 50V 0.15A SOT23-3
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 320mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 250MHz
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