Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 150mA Pmax 1W
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 30mA, 25V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 160MHz
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- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 60MHz
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- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 60MHz
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- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 60MHz
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92L-A1
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 300MHz
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 60MHz
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- Power - Max: 1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 50MHz
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- Offers in stock:
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- 100