Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 15A Pmax 180W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 13
  • 2SA1987-O(Q)
    TRANS PNP 230V 15A TO3P
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3PL
    • Supplier Device Package: TO-3P(L)
    • Power - Max: 180W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • NJL0302DG
    TRANS PNP 260V 15A TO264
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-264-5
    • Supplier Device Package: TO-264
    • Power - Max: 180W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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  • BU941
    TRANS NPN DARL 400V 15A TO3
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Chassis Mount
    • Operating Temperature: 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 180W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A
    • Current - Collector Cutoff (Max): 100µA
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  • NJL0281DG
    TRANS NPN 260V 15A TO264
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-264-5
    • Supplier Device Package: TO-264
    • Power - Max: 180W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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  • MJL0281A
    TRANS NPN 260V 15A TO264
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 180W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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  • MJL0281AG
    TRANS NPN 260V 15A TO264
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 180W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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  • 2SC5359-O(Q)
    TRANS NPN 230V 15A TO3P
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3PL
    • Supplier Device Package: TO-3P(L)
    • Power - Max: 180W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 230V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
    • Current - Collector Cutoff (Max): 5µA (ICBO)
    • Frequency - Transition: 30MHz
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  • MJL0302AG
    TRANS PNP 260V 15A TO264
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 180W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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  • MJ15015G
    TRANS NPN 120V 15A TO204
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-204 (TO-3)
    • Power - Max: 180W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 120V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 5V @ 7A, 15A
    • Current - Collector Cutoff (Max): 100µA
    • Frequency - Transition: 6MHz
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  • MJL0302A
    POWER BIPOLAR TRANSISTOR, PNP
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 180W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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  • MJL0302AG
    POWER BIPOLAR TRANSISTOR, PNP
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 180W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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  • MJL0281AG
    POWER BIPOLAR TRANSISTOR, NPN
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 180W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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  • MJL0302A
    TRANS PNP 260V 15A TO264
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 180W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 260V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 30MHz
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