Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 12A Pmax 150W

Found: 36
  • TRANS NPN DARL 150V 12A MT-200
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-ESIP
    • Supplier Device Package: MT-200
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 150V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 55MHz
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  • TRANS NPN DARL 80V 12A TO-3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/502
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS PNP DARL 80V 12A TO3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/501
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3
    • Supplier Device Package: TO-3 (TO-204AA)
    • Power - Max: 150W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • T-PNP SI-DARLINGTON AMP
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-204 (TO-3)
    • Power - Max: 150W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS NPN 800V 12A TO3P
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 800V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2A, 6A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 15MHz
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  • TRANS PNP DARL 80V 12A TO-3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/501
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3
    • Supplier Device Package: TO-3 (TO-204AA)
    • Power - Max: 150W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS NPN DARL 100V 12A TO204AA
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/502
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-204AA (TO-3)
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS PNP DARL 100V 12A TO3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/501
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3
    • Supplier Device Package: TO-3 (TO-204AA)
    • Power - Max: 150W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS PNP DARL 80V 12A TO-3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/501
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3
    • Supplier Device Package: TO-3 (TO-204AA)
    • Power - Max: 150W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS PNP 100V 12A TO3
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 150W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 4MHz
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  • TRANS NPN 800V 12A TO3P
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 150W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 800V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 800mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2A, 6A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 15MHz
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  • TRANS NPN DARL 80V 12A TO3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/502
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • T-NPN SI-DARLINGTON AMP
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Chassis Mount
    • Operating Temperature: 200°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-3
    • Power - Max: 150W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
    • Frequency - Transition: 4MHz
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  • TRANS PNP DARL 80V 12A TO-3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/501
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-204AA, TO-3
    • Supplier Device Package: TO-204AA (TO-3)
    • Power - Max: 150W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
    • Current - Collector Cutoff (Max): 1mA
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  • TRANS PNP DARL 150V 12A MT-200
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-ESIP
    • Supplier Device Package: MT-200
    • Power - Max: 150W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 150V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A
    • Current - Collector Cutoff (Max): 100µA (ICBO)
    • Frequency - Transition: 50MHz
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