Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 12A Pmax 125W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 11
  • BDV64B
    TRANS PNP 100V 12A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Frequency - Transition: 60MHz
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  • STWH13009
    TRANS NPN 400V 12A TO247-3
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 5A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 2V @ 2.4A, 12A
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  • BDV65
    TRANS NPN 60V 12A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Frequency - Transition: 60MHz
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  • BDV65B
    TRANS NPN 100V 12A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Frequency - Transition: 60MHz
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  • BDV64B
    TRANS PNP DARL 100V 10A TO-218
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Frequency - Transition: 60MHz
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  • BDV64A
    TRANS PNP 80V 12A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Frequency - Transition: 60MHz
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  • BDV65A
    TRANS NPN 80V 12A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Frequency - Transition: 60MHz
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  • BDV64
    TRANS PNP 60V 12A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Frequency - Transition: 60MHz
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  • BDV64
    T-PNP SI- HIGH PWR DARL
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Frequency - Transition: 60MHz
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  • BDV65
    T-NPN SI- HIGH PWR DARL
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Frequency - Transition: 60MHz
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  • STW13009
    TRANS NPN 400V 12A TO247-3
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3A, 12A
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