Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 10A Pmax 125W

Found: 39
  • TRANS NPN DARL 60V 10A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • T-NPN SI- PO DARLINGTON
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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  • TRANS PNP 60V 10A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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  • TRANS NPN DARL 100V 10A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • TRANS NPN DARL 80V 10A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • TRANS PNP DARL 60V 10A TO218
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • T-PNP SI- PO DARLINGTON
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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  • TRANS PNP DARL 100V 10A TO247
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Power - Max: 125W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • TRANS NPN DARL 80V 10A TO218
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • T-PNP SI- PO DARLINGTON
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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  • TRANS PNP 80V 10A TO218
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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  • TRANS NPN DARL 450V 10A SOT93
    Bourns Inc.
    • Manufacturer: Bourns Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: SOT-93
    • Power - Max: 125W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 450V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
    • Current - Collector Cutoff (Max): 50µA
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  • TRANS NPN 80V 10A TO218
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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  • TRANS PNP DARL 100V 10A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 125W
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 100V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
    • Current - Collector Cutoff (Max): 2mA
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  • T-NPN SI- PO DARLINGTON
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-218-3
    • Supplier Device Package: TO-218
    • Power - Max: 125W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 80V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
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