Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 10A Pmax 100W
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 20MHz
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2.5A, 10V
- Vce Saturation (Max) @ Ib, Ic: 3.3V @ 2.5A, 8A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 10MHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 700mA, 7A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 20MHz
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- Manufacturer: onsemi
- Series: SWITCHMODE™
- Mounting Type: Through Hole
- Operating Temperature: -60°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 700V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 23MHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 5A
- Current - Collector Cutoff (Max): 250µA
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 100W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3V, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 70MHz
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 100W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 700mA, 7A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 20MHz
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-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 30MHz
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 700mA, 7A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 20MHz
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- Offers in stock:
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- 15
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- 100