Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.2A Pmax 1.2W

Found: 12
  • TRANS NPN 160V 1.2A TO126-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126-3
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 155MHz
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  • TRANS NPN 120V 1.2A TO126-3
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126-3
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 120V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 155MHz
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  • TRANS NPN 160V 1.2A TO126-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126-3
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 155MHz
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  • TRANS PNP 120V 1.2A TO126
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 120V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 175MHz
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  • TRANS NPN 160V 1.2A TO126-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126-3
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 155MHz
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  • TRANS NPN 160V 1.2A TO126-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126-3
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 155MHz
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  • TRANS NPN 120V 1.2A TO126-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126-3
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 120V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 155MHz
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  • TRANS PNP 160V 1.2A TO126
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 175MHz
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  • TRANS NPN 160V 1.2A TO126-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126-3
    • Power - Max: 1.2W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 155MHz
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  • TRANS PNP 160V 1.2A TO126
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 175MHz
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  • POWER BIPOLAR TRANSISTOR, PNP
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 120V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 175MHz
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  • TRANS PNP 160V 1.2A TO126
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126
    • Power - Max: 1.2W
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 160V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
    • Current - Collector Cutoff (Max): 1µA (ICBO)
    • Frequency - Transition: 175MHz
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