Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.5A Pmax 1.1W

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 19
  • APT13003DU-E1
    TRANS NPN DARL 450V 1.5A TO126
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126
    • Power - Max: 1.1W
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 450V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
    • Current - Collector Cutoff (Max): 10µA
    • Frequency - Transition: 4MHz
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  • TTC008(Q)
    TRANS NPN 285V 1.5A PW-MOLD2
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Supplier Device Package: PW-MOLD2
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 285V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • FJN3303BU
    POWER BIPOLAR TRANSISTOR, NPN
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 4MHz
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  • 2SC6142(Q)
    TRANS NPN 375V 1.5A PW-MOLD2
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-251-3 Stub Leads, IPak
    • Supplier Device Package: PW-MOLD2
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 375V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
    • Current - Collector Cutoff (Max): 50µA (ICBO)
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  • APT13003EZTR-G1
    TRANS NPN 465V 1.5A TO92
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 465V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
    • Frequency - Transition: 4MHz
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  • APT13003DZTR-G1
    TRANS NPN 450V 1.5A TO92
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 450V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
    • Frequency - Transition: 4MHz
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  • FJN3303TA
    TRANS NPN 400V 1.5A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 4MHz
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  • FJN3303TA
    POWER BIPOLAR TRANSISTOR, NPN
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 4MHz
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  • FJN3303BU
    TRANS NPN 400V 1.5A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 4MHz
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  • APT13003HZTR-G1
    TRANS NPN 465V 1.5A TO92
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 465V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
    • Frequency - Transition: 4MHz
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  • FJN13003BU
    TRANS NPN 400V 1.5A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
    • Frequency - Transition: 4MHz
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  • FJN3303TA
    TRANS NPN 400V 1.5A TO92-3
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 4MHz
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  • FJN3303BU
    TRANS NPN 400V 1.5A TO92-3
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
    • Current - Collector Cutoff (Max): 10µA (ICBO)
    • Frequency - Transition: 4MHz
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  • FJN13003TA
    TRANS NPN 400V 1.5A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
    • Frequency - Transition: 4MHz
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  • APT13003EU-E1
    TRANS NPN 465V 1.5A TO126
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Series: Automotive, AEC-Q101
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-225AA, TO-126-3
    • Supplier Device Package: TO-126
    • Power - Max: 1.1W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 1.5A
    • Voltage - Collector Emitter Breakdown (Max): 465V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 300mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
    • Current - Collector Cutoff (Max): 10µA
    • Frequency - Transition: 4MHz
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