Transistors - Bipolar (BJT) - Single IC(MAX) 12A | Transistors

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List Table

Found: 142

BDW94

POWER BIPOLAR TRANSISTOR, PNP

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 80W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
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BDW93C-S

TRANS NPN DARL 100V 12A TO220

Bourns Inc.
- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 2W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
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BDW93A-S

TRANS NPN DARL 60V 12A TO220

Bourns Inc.
- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 2W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
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2SA2007E

TRANS PNP 60V 12A TO220FN

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FN
- Power - Max: 25W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 320 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 80MHz
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BDW94A-S

TRANS PNP DARL 60V 12A TO220

Bourns Inc.
- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 2W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
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2N6052 PBFREE

TRANS PNP 100V 12A TO3

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 4MHz
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FJP13009H2TU

TRANS NPN 400V 12A TO220-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Frequency - Transition: 4MHz
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STH13009

TRANS NPN 400V 12A TO220

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 2.4A, 12A
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PHE13009/DG,127

NOW WEEN - PHE13009 - POWER BIPO

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power - Max: 80W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
- Current - Collector Cutoff (Max): 100µA
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KSC3552RTU

TRANS NPN 800V 12A TO3P

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 800mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 15MHz
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JANTX2N6058

TRANS NPN DARL 80V 12A TO3

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/502
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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BDV65-S

TRANS NPN DARL 60V 12A SOT93

Bourns Inc.
- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 3.5W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 5A
- Current - Collector Cutoff (Max): 2mA
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BDV65

TRANS NPN 60V 12A TO218

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Frequency - Transition: 60MHz
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BDV65B

TRANS NPN 100V 12A TO218

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
- Frequency - Transition: 60MHz
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BUV27G

TRANS NPN 120V 12A TO220

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 70W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 800mA, 8A
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