- Supplier Device Package
- Manufacturer
- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Transistor Type
-
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
| Partnumber | Description | Manufacturer
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Supplier Device Package
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Resistor - Emitter Base (R2)
|
Package / Case
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RN1701JE(TE85L,F) | TRANS 2NPN PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | SOT-553 |
| RN2705JE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | ESV | 2.2kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 200MHz | 47kOhms | SOT-553 |
| RN1711JE(TE85L,F) | TRANSISTOR NPN X2 BRT Q1BSR10KOH | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | ESV | 10kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 250MHz | SOT-553 | |
| RN1704JE(TE85L,F) | TRANS 2NPN PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 47kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 250MHz | 47kOhms | SOT-553 |
| RN2709JE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | ESV | 47kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 70 @ 10mA, 5V | 200MHz | 22kOhms | SOT-553 |
| RN1707JE(TE85L,F) | NPN X 2 BRT Q1BSR=10KOHM Q1BER=4 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 10kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 250MHz | 47kOhms | SOT-553 |
| RN2701JE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | ESV | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | SOT-553 |
| RN1710JE(TE85L,F) | NPN X 2 BRT Q1BSR=4.7KOHM Q1BER= | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 250MHz | SOT-553 |
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