-
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
| Partnumber | Description | Manufacturer
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Supplier Device Package
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Resistor - Emitter Base (R2)
|
Package / Case
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PDTB143EQA147 | PDTB143EQA SMALL SIGNAL FET | NXP USA Inc. | 500mA | 50V | 325mW | Surface Mount | PNP - Pre-Biased | DFN1010D-3 | 4.7kOhms | 100mV @ 2.5mA, 50mA | 500nA | 60 @ 50mA, 5V | 150MHz | 4.7kOhms | 3-XDFN Exposed Pad | PDTB143 |
- 10
- 15
- 50
- 100