-
- Power Dissipation (Max)
- Resistance @ If, F
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Diode Type
|
Supplier Device Package
|
Operating Temperature
|
Current - Max
|
Capacitance @ Vr, F
|
Power Dissipation (Max)
|
Resistance @ If, F
|
|---|---|---|---|---|---|---|---|---|---|---|---|
| BAR 64-07 E6327 | RF DIODE PIN 150V 250MW SOT143-4 | Infineon Technologies | TO-253-4, TO-253AA | 150V | PIN - 2 Independent | PG-SOT-143-3D | 150°C (TJ) | 100mA | 0.35pF @ 20V, 1MHz | 250mW | 1.35Ohm @ 100mA, 100MHz |
| BAT1707E6327HTSA1 | DIODE SCHOTTKY 4V 150MW SOT143-4 | Infineon Technologies | TO-253-4, TO-253AA | 4V | Schottky - 2 Independent | PG-SOT-143-3D | 150°C (TJ) | 130mA | 0.75pF @ 0V, 1MHz | 150mW | 15Ohm @ 5mA, 10kHz |
| BAT15099E6327HTSA1 | DIODE SCHOTTKY 4V 100MW SOT143-4 | Infineon Technologies | TO-253-4, TO-253AA | 4V | Schottky - 2 Independent | PG-SOT-143-3D | 150°C (TJ) | 110mA | 0.35pF @ 0V, 1MHz | 100mW | |
| BAT62E6327HTSA1 | DIODE SCHOTTKY 40V 100MW SOT143 | Infineon Technologies | TO-253-4, TO-253AA | 40V | Schottky - 2 Independent | PG-SOT-143-3D | 150°C (TJ) | 20mA | 0.6pF @ 0V, 1MHz | 100mW | |
| BAT15099RE6327HTSA1 | DIODE SCHOTTKY 4V 100MW SOT143-4 | Infineon Technologies | TO-253-4, TO-253AA | 4V | Schottky - 1 Bridge | PG-SOT-143-3D | 150°C (TJ) | 110mA | 0.5pF @ 0V, 1MHz | 100mW | |
| BAT15099E6433HTMA1 | DIODE SCHOTTKY 4V 100MW SOT143-4 | Infineon Technologies | TO-253-4, TO-253AA | 4V | Schottky - 2 Independent | PG-SOT-143-3D | 150°C (TJ) | 110mA | 0.35pF @ 0V, 1MHz | 100mW |
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