• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 5
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
10A10-C1-3000 DIODE GEN PURP 1000V 10A R6 Yangzhou Yangjie Electronic Technology Co.,Ltd R-6, Axial 10A Standard Through Hole R-6 Standard Recovery >500ns, > 200mA (Io) 5µA @ 1000V 1.1V @ 10A 1000V -55°C ~ 200°C
SR10100L-D1-0000 DIODE SCHOTTKY 100V 10A DO201AD Yangzhou Yangjie Electronic Technology Co.,Ltd DO-201AA, DO-27, Axial 10A Schottky Through Hole DO-201AD (DO-27) Fast Recovery =< 500ns, > 200mA (Io) 200µA @ 100V 700pF @ 4V, 1MHz 750mV @ 10A 100V -55°C ~ 150°C
MUR1040D-F1-0000HF DIODE GEN PURP 400V 10A TO252 Yangzhou Yangjie Electronic Technology Co.,Ltd TO-252-3, DPak (2 Leads + Tab), SC-63 10A Standard Surface Mount TO-252 Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 1700V 50pF @ 4V, 1MHz 1.25V @ 10A 400V 35ns -55°C ~ 150°C
SS1010-F1-0000HF DIODE SCHOTTKY 100V 10A DO214AB Yangzhou Yangjie Electronic Technology Co.,Ltd DO-214AB, SMC 10A Schottky Surface Mount DO-214AB (SMC) Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 100V 850mV @ 8A 100V -55°C ~ 150°C
10A10G-D1-0000 DIODE GEN PURP 1000V 10A R6 Yangzhou Yangjie Electronic Technology Co.,Ltd R-6, Axial 10A Standard Through Hole R-6 Standard Recovery >500ns, > 200mA (Io) 2.5 µA @ 1000 V 60pF @ 4V, 1MHz 1.1V @ 10A 1000V -55°C ~ 150°C
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