• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 37
  • BYC10X-600PQ
    DIODE GEN PURP 600V 10A TO220F
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2.9V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 40ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • WNSC2D10650WQ
    WNSC2D10650W/TO247-2L/STANDARD M
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • NXPSC10650BJ
    DIODE SCHOTTKY 650V 10A D2PAK
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 250µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BYC10-600,127
    DIODE GEN PURP 500V 10A TO220AC
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 500V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2.9V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 55ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • WNSC101200WQ
    SILICON CARBIDE POWER DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 110µA @ 1200V
    • Capacitance @ Vr, F: 510pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BYC405X-400PQ
    DUAL HYPERFAST POWER DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220F
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 40ns
    • Current - Reverse Leakage @ Vr: 10µA @ 400V
    • Operating Temperature - Junction: 150°C
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  • BYC10DX-600,127
    DIODE GEN PURP 500V 10A TO220FP
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 500V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 18ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • BYC10B-600,118
    DIODE GEN PURP 500V 10A D2PAK
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 500V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2.9V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 55ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • WNSC2D10650BJ
    WNSC2D10650B/TO263/REEL 13" Q1/T
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • NXPSC10650DJ
    DIODE SCHOTTKY 650V 10A DPAK
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 250µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • WNSC2D10650Q
    WNSC2D10650/TO-220AC/STANDARD MA
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • WNSC2D10650TJ
    SILICON CARBIDE SCHOTTKY DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: 4-VSFN Exposed Pad
    • Supplier Device Package: 5-DFN (8x8)
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • WNSC101200Q
    SILICON CARBIDE POWER DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 110µA @ 1200V
    • Capacitance @ Vr, F: 510pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • WNSC2D10650XQ
    SILICON CARBIDE SCHOTTKY DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • BYV10MX-600PQ
    ULTRAFAST POWER DIODE IN 2-LEADS
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220F
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 175°C
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