• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 37
  • WNSC2D101200WQ
    SILICON CARBIDE SCHOTTKY DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 110µA @ 1200V
    • Capacitance @ Vr, F: 490pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • WNSC6D10650Q
    SILICON CARBIDE SCHOTTKY DIODE I
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • WNSC10650WQ
    SILICON CARBIDE SCHOTTKY DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 60µA @ 650V
    • Capacitance @ Vr, F: 328pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • NXPSC10650B6J
    DIODE SCHOTTKY 650V 10A D2PAK
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 250µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BYC10X-600,127
    DIODE GEN PURP 500V 10A TO220FP
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 500V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2.9V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 55ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • WND10P08XQ
    STANDARD POWER DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220F
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 800V
    • Operating Temperature - Junction: 150°C
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  • NXPLQSC10650Q
    DIODE SCHOTTKY 650V 10A TO220AC
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 230µA @ 650V
    • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BYV10ED-600PJ
    DIODE GEN PURP 600V 10A DPAK
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 175°C (Max)
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  • WNSC10650T6J
    SILICON CARBIDE POWER DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: 4-VSFN Exposed Pad
    • Supplier Device Package: 5-DFN (8x8)
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 60µA @ 650V
    • Capacitance @ Vr, F: 328pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BYV10EX-600PQ
    DIODE GEN PURP 600V 10A TO220F
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • WNSC2D10650DJ
    SILICON CARBIDE SCHOTTKY DIODE
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C
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  • WND10P08YQ
    STANDARD REVERSE RECOVERY POWER
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: IITO-220-2
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 800V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 10µA @ 800V
    • Operating Temperature - Junction: 150°C
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  • NXPSC10650D6J
    DIODE SCHOTTKY 650V 10A DPAK
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 250µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • BYV10X-600PQ
    DIODE GEN PURP 600V 10A TO220-2
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220FP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 20ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 175°C (Max)
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  • NXPSC10650Q
    DIODE SCHOTTKY 650V 10A TO220AC
    WeEn Semiconductors
    • Manufacturer: WeEn Semiconductors
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 250µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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