-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GP2D010A065C | DIODE SCHOTTKY 650V 10A TO252 | SemiQ | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A | Silicon Carbide Schottky | Surface Mount | TO-252, (D-Pak) | No Recovery Time > 500mA (Io) | 100µA @ 650V | 527pF @ 1V, 1MHz | 1.65V @ 10A | 650V | -55°C ~ 175°C | AMP | |
| GP2D010A120B | DIODE SCHOTTKY 1.2KV 10A TO247-2 | SemiQ | TO-247-2 | 10A | Silicon Carbide Schottky | Through Hole | TO-247-2 | No Recovery Time > 500mA (Io) | 20µA @ 1200V | 635pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | AMP |
| GP2D010A170B | DIODE SCHOTTKY 1.7KV 10A TO247-2 | SemiQ | TO-247-2 | 10A | Silicon Carbide Schottky | Through Hole | TO-247-2 | No Recovery Time > 500mA (Io) | 20µA @ 1700V | 812pF @ 1V, 1MHz | 1.75V @ 10A | 1700V | 0ns | -55°C ~ 175°C | AMP |
| GP2D010A120A | DIODE SCHOTTKY 1.2KV 10A TO220-2 | SemiQ | TO-220-2 | 10A | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 20µA @ 1200V | 635pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | AMP |
| GP3D010A120A | SIC SCHOTTKY DIODE 1200V TO220 | SemiQ | TO-220-2 | 10A | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 20µA @ 1200V | 608pF @ 1V, 1MHz | 1.65V @ 10A | 1200V | 0ns | -55°C ~ 175°C | AMP |
| GP2D010A065A | DIODE SCHOTTKY 650V 10A TO220-2 | SemiQ | TO-220-2 | 10A | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 100µA @ 650V | 527pF @ 1V, 1MHz | 1.65V @ 10A | 650V | -55°C ~ 175°C | AMP | |
| GP3D010A065A | SIC SCHOTTKY DIODE 650V TO220 | SemiQ | TO-220-2 | 10A | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 25µA @ 650V | 419pF @ 1V, 1MHz | 1.6V @ 10A | 650V | 0ns | -55°C ~ 175°C | AMP |
| GP3D010A120B | SIC SCHOTTKY DIODE 1200V TO247-2 | SemiQ | TO-247-2 | 10A | Silicon Carbide Schottky | Through Hole | TO-247-2 | No Recovery Time > 500mA (Io) | 20µA @ 1200V | 608pF @ 1V, 1MHz | 1.65V @ 10A | 1200V | 0ns | -55°C ~ 175°C | AMP |
| GP3D010A065D | SIC SCHOTTKY DIODE 650V TO263-2L | SemiQ | 10A | 650V |
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