-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDW10S120FKSA1 | RECTIFIER DIODE | Rochester Electronics, LLC | TO-247-3 | 10A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO247-3-41 | No Recovery Time > 500mA (Io) | 240µA @ 1.2V | 580pF @ 1V, 1MHz | 1.8V @ 10A | 1.2V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| IDK10G65C5XTMA1 | RECTIFIER DIODE | Rochester Electronics, LLC | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A (DC) | Silicon Carbide Schottky | Surface Mount | PG-TO263-2 | No Recovery Time > 500mA (Io) | 1.7mA @ 650V | 300pF @ 1V, 1MHz | 1.8V @ 10A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| SDT10S30 | RECTIFIER DIODE | Rochester Electronics, LLC | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 200µA @ 300V | 600pF @ 0V, 1MHz | 1.7V @ 10A | 300V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| IDH10S120AKSA1 | RECTIFIER DIODE | Rochester Electronics, LLC | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 240µA @ 1.2V | 500pF @ 1V, 1MHz | 1.8V @ 10A | 1.2V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
| IDH10SG60CXKSA1 | RECTIFIER DIODE | Rochester Electronics, LLC | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 90µA @ 600V | 290pF @ 1V, 1MHz | 2.1V @ 10A | 600V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
- 10
- 15
- 50
- 100