• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 5
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
PCDP0865G1_T0_00001 TO-220AC, SIC Panjit International Inc. TO-220-2 8A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 60µA @ 650V 296pF @ 1V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
PCDB0865G1_T0_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 60µA @ 650V 296pF @ 1V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
PCDD08120G1_L2_00001 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 8A (DC) Silicon Carbide Schottky Surface Mount TO-252AA No Recovery Time > 500mA (Io) 60µA @ 1200V 418pF @ 1V, 1MHz 1.7V @ 8A 1200V 0ns -55°C ~ 175°C
PCDD0865G1_L2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 8A (DC) Silicon Carbide Schottky Surface Mount TO-252AA No Recovery Time > 500mA (Io) 60µA @ 650V 296pF @ 1V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
PCDP08120G1_T0_00001 TO-220AC, SIC Panjit International Inc. TO-220-2 8A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 60µA @ 1200V 418pF @ 1V, 1MHz 1.7V @ 8A 1200V 0ns -55°C ~ 175°C
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