• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 4
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
PCDP2065G1_T0_00001 TO-220AC, SIC Panjit International Inc. TO-220-2 20A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 120µA @ 650V 747pF @ 1V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
PCDH20120G1_T0_00601 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. TO-247-2 20A (DC) Silicon Carbide Schottky Through Hole TO-247AD-2 No Recovery Time > 500mA (Io) 180µA @ 1200V 1023pF @ 1V, 1MHz 1.7V @ 20A 1200V 0ns -55°C ~ 175°C
PCDP20120G1_T0_00001 TO-220AC, SIC Panjit International Inc. TO-220-2 20A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 180µA @ 1200V 1.04nF @ 1V, 1MHz 1.7V @ 20A 1200V 0ns -55°C ~ 175°C
PCDB20120G1_T0_00001 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 20A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 180µA @ 1200V 1040pF @ 1V, 1MHz 1.7V @ 20A 1200V 0ns -55°C ~ 175°C
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