-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PCDP1065G1_T0_00001 | TO-220AC, SIC | Panjit International Inc. | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 70µA @ 650V | 364pF @ 1V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
PCDD10120G1_L2_00001 | 1200V SIC SCHOTTKY BARRIER DIODE | Panjit International Inc. | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252AA | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 529pF @ 1V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C |
PCDB1065G1_T0_00001 | 650V SIC SCHOTTKY BARRIER DIODE | Panjit International Inc. | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 70µA @ 650V | 364pF @ 1V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
PCDD1065G1_L2_00001 | 650V SIC SCHOTTKY BARRIER DIODE | Panjit International Inc. | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252AA | No Recovery Time > 500mA (Io) | 70µA @ 650V | 364pF @ 1V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
PCDB10120G1_T0_00001 | 1200V SIC SCHOTTKY BARRIER DIODE | Panjit International Inc. | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 529pF @ 1V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C |
PCDP10120G1_T0_00001 | TO-220AC, SIC | Panjit International Inc. | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 529pF @ 1V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C |
- 10
- 15
- 50
- 100