-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL9R18120G2 | DIODE GEN PURP 1200V 18A TO247-2 | onsemi | TO-247-2 | 18A | Standard | Through Hole | TO-247-2 | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 1200V | 3.3V @ 18A | 1200V | 70ns | -55°C ~ 150°C | Stealth™ |
| ISL9R18120S3ST | DIODE GEN PURP 1200V 18A TO263AB | onsemi | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 18A | Standard | Surface Mount | D²PAK (TO-263) | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 1200V | 3.3V @ 18A | 1200V | 300ns | -55°C ~ 175°C | Stealth™ |
| ISL9R18120P2 | DIODE GEN PURP 1.2KV 18A TO220AC | onsemi | TO-220-2 | 18A | Standard | Through Hole | TO-220-2 | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 1200V | 3.3V @ 18A | 1200V | 70ns | -55°C ~ 150°C | Stealth™ |
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