-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FFSD0865B-F085 | 650V 8A SIC SBD GEN1.5 | onsemi | TO-252-3, DPak (2 Leads + Tab), SC-63 | 11.6A (DC) | Silicon Carbide Schottky | Surface Mount | D-PAK (TO-252) | No Recovery Time > 500mA (Io) | 40µA @ 650V | 336pF @ 1V, 100kHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| FFSD0865B | 650V 8A SIC SBD GEN1.5 | onsemi | TO-252-3, DPak (2 Leads + Tab), SC-63 | 11.6A (DC) | Silicon Carbide Schottky | Surface Mount | D-PAK (TO-252) | No Recovery Time > 500mA (Io) | 40µA @ 650V | 336pF @ 1V, 100kHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| FFSM0865B | SILICON CARBIDE DIODE 650V 8A PQ | onsemi | 4-PowerTSFN | 11.6A (DC) | Silicon Carbide Schottky | Surface Mount | 4-PQFN (8x8) | No Recovery Time > 500mA (Io) | 40µA @ 650V | 336pF @ 1V, 100kHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C |
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