-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAS116T,115 | DIODE GEN PURP 75V 215MA SC75 | NXP USA Inc. | SC-75, SOT-416 | 215mA (DC) | Standard | Surface Mount | SC-75 | Standard Recovery >500ns, > 200mA (Io) | 5nA @ 75V | 2pF @ 0V, 1MHz | 1.25V @ 150mA | 75V | 3µs | 150°C (Max) |
| 1PS193,135 | DIODE GEN PURP 80V 215MA SMT3 | NXP USA Inc. | TO-236-3, SC-59, SOT-23-3 | 215mA (DC) | Standard | Surface Mount | SMT3; MPAK | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 80V | 1.5pF @ 0V, 1MHz | 1.2V @ 100mA | 80V | 4ns | 150°C (Max) |
| 1PS193,115 | DIODE GEN PURP 80V 215MA SMT3 | NXP USA Inc. | TO-236-3, SC-59, SOT-23-3 | 215mA (DC) | Standard | Surface Mount | SMT3; MPAK | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 80V | 1.5pF @ 0V, 1MHz | 1.2V @ 100mA | 80V | 4ns | 150°C (Max) |
| BAS316/ZLX | DIODE GEN PURP 100V 215MA SOD323 | NXP USA Inc. | SC-76, SOD-323 | 215mA (DC) | Standard | Surface Mount | SOD-323 | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 80V | 1pF @ 0V, 1MHz | 1.25V @ 150mA | 100V | 4ns | 150°C (Max) |
| BAS316/ZLF | DIODE GEN PURP 100V 215MA SOD323 | NXP USA Inc. | SC-76, SOD-323 | 215mA (DC) | Standard | Surface Mount | SOD-323 | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 80V | 1.5pF @ 0V, 1MHz | 1.25V @ 150mA | 100V | 4ns | 150°C (Max) |
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