-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMEG2002ESF,315 | NOW NEXPERIA PMEG2002ESF - RECTI | NXP USA Inc. | 0201 (0603 Metric) | 200mA | Schottky | Surface Mount | DSN0603-2 | Small Signal =< 200mA (Io), Any Speed | 3.5µA @ 20V | 25pF @ 1V, 1MHz | 490mV @ 100mA | 20V | 1.9ns | 125°C (Max) |
| PMEG3002ESFYL | NOW NEXPERIA PMEG3002ESF - 30 V, | NXP USA Inc. | 0201 (0603 Metric) | 200mA | Schottky | Surface Mount | DSN0603-2 | Small Signal =< 200mA (Io), Any Speed | 9µA @ 30V | 21pF @ 1V, 1MHz | 535mV @ 200mA | 30V | 1.42ns | 150°C (Max) |
| PMEG2002AESF,315 | NOW NEXPERIA PMEG2002AESF - RECT | NXP USA Inc. | 0201 (0603 Metric) | 200mA | Schottky | Surface Mount | DSN0603-2 | Fast Recovery =< 500ns, > 200mA (Io) | 45µA @ 20V | 25pF @ 1V, 1MHz | 420mV @ 200mA | 20V | 1.9ns | 125°C (Max) |
| 1N914B,113 | DIODE GEN PURP 100V 200MA ALF2 | NXP USA Inc. | DO-204AH, DO-35, Axial | 200mA | Standard | Through Hole | ALF2 | Small Signal =< 200mA (Io), Any Speed | 5µA @ 75V | 4pF @ 0V, 1MHz | 1V @ 100mA | 100V | 4ns | 175°C (Max) |
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