-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N645 | D-SI 225V .4A | NTE Electronics, Inc | DO-204AH, DO-35, Axial | 400mA | Standard | Through Hole | DO-35 | Standard Recovery >500ns, > 200mA (Io) | 200nA @ 225V | 15pF @ 4V, 1MHz | 1V @ 400mA | 225V | -65°C ~ 175°C |
- 10
- 15
- 50
- 100