• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 1
  • 1N645
    D-SI 225V .4A
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Package / Case: DO-204AH, DO-35, Axial
    • Supplier Device Package: DO-35
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 225V
    • Current - Average Rectified (Io): 400mA
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 200nA @ 225V
    • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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