- Manufacturer
- Current - Average Rectified (Io)
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMBD3595 | DIE DIODE GENERAL PURPOSE | MICROSS/On Semiconductor | |||||||||||||
| 1N914 | DIODE GEN PURP 100V 200MA DIE | MICROSS/On Semiconductor | Die | 200mA | Standard | Die | Small Signal =< 200mA (Io), Any Speed | 25nA @ 20V | 4pF @ 0V, 1MHz | 1V @ 10mA | 100V | 4ns | -55°C ~ 175°C | Automotive, AEC-Q101 | |
| FD700 | DIODE GEN PURP 20V 50MA DIE | MICROSS/On Semiconductor | Die | 50mA | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 50nA @ 20V | 1pF @ 0V, 1MHz | 1.1V @ 50mA | 20V | 700ns | 175°C (Max) | |
| 1N4148 | DIODE GEN PURP 100V 200MA DIE | MICROSS/On Semiconductor | Die | 200mA | Standard | Through Hole | Die | Small Signal =< 200mA (Io), Any Speed | 5µA @ 75V | 4pF @ 0V, 1MHz | 1V @ 10mA | 100V | 4ns | -55°C ~ 175°C | |
| MMBD459A | DIE DIODE GENERAL PURPOSE | MICROSS/On Semiconductor |
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- 100