Semiconductors, Diodes, Diodes - Rectifiers - Arrays Microchip Technology 1.4A

    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 28
  • JANTX1N6631U/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 4µA @ 1V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTXV1N6631
    DIODE GEN PURP 1.1KV 1.4A D5B
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Supplier Device Package: E-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1100V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 4µA @ 1100V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JAN1N6630
    DIODE GEN PURP 900V 1.4A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 900V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 2µA @ 900V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • 1N6631US/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, A
    • Supplier Device Package: A-MELF
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1.1 V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 4 µA @ 1.1 V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JAN1N6631/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1.1 V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 2µA @ 1V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • 1N6631
    DIODE GEN PURP 1.1KV 1.4A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1100V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 4µA @ 1100V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTXV1N6631/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Supplier Device Package: E-PAK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1.1 V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 4 µA @ 1.1 V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • 1N6630/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 990V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 2µA @ 990V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTX1N6631U
    DIODE GEN PURP 1KV 1.4A E-MELF
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1000V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 4µA @ 1000V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTXV1N6631US/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: E-MELF
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1.1 V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 4 µA @ 1.1 V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JANTX1N6630US
    DIODE GEN PURP 900V 1.4A E-MELF
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: SQ-MELF, E
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 900V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 2µA @ 900V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • 1N6630
    DIODE GEN PURP 990V 1.4A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Package / Case: A, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 990V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 2µA @ 990V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JAN1N6631
    DIODE GEN PURP 1.1KV 1.4A AXIAL
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1100V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 2µA @ 1000V
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • JAN1N6630/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Through Hole
    • Package / Case: E, Axial
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 900V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 2µA @ 900V
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • JAN1N6631US/TR
    RECTIFIER UFR,FRR
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/590
    • Mounting Type: Surface Mount
    • Package / Case: E-MELF
    • Supplier Device Package: D-5B
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1.1 V
    • Current - Average Rectified (Io): 1.4A
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 60ns
    • Current - Reverse Leakage @ Vr: 4 µA @ 1.1 V
    • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • 10
  • 15
  • 50
  • 100