-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N6631US | DIODE GEN PURP 1.1KV 1.4A D5B | Microchip Technology | E-MELF | 1.4A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 4µA @ 1100V | 40pF @ 10V, 1MHz | 1.6V @ 1.4A | 1100V | 60ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 |
| 1N6630US | DIODE GEN PURP 900V 1.4A D5B | Microchip Technology | E-MELF | 1.4A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 4µA @ 100V | 1.7V @ 3A | 900V | 50ns | -65°C ~ 150°C | ||
| 1N6631US | DIODE GEN PURP 1.1KV 1.4A A-MELF | Microchip Technology | SQ-MELF, A | 1.4A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 4µA @ 1100V | 40pF @ 10V, 1MHz | 1.4V @ 1.4A | 1100V | 60ns | -65°C ~ 150°C | |
| JANTXV1N6630 | DIODE GEN PURP 900V 1.4A AXIAL | Microchip Technology | E, Axial | 1.4A | Standard | Through Hole | E-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 900V | 1.4V @ 1.4A | 900V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
| JANTX1N6630US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, E | 1.4A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 900V | 1.4V @ 1.4A | 900V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
| JAN1N6630US | DIODE GEN PURP 900V 1.4A E-MELF | Microchip Technology | SQ-MELF, E | 1.4A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 900V | 1.4V @ 1.4A | 900V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
| JANTX1N6631US/TR | RECTIFIER UFR,FRR | Microchip Technology | E-MELF | 1.4A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 4 µA @ 1.1 V | 40pF @ 10V, 1MHz | 1.6V @ 1.4A | 1.1 V | 60ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 |
| 1N6630US/TR | RECTIFIER UFR,FRR | Microchip Technology | E-MELF | 1.4A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 4µA @ 100V | 1.7V @ 3A | 900V | 50ns | -65°C ~ 150°C | ||
| 1N6631/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1.4A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 4 µA @ 1.1 V | 40pF @ 10V, 1MHz | 1.4V @ 1.4A | 1.1 V | 60ns | -65°C ~ 150°C | ||
| JANTXV1N6630/TR | RECTIFIER UFR,FRR | Microchip Technology | E, Axial | 1.4A | Standard | Through Hole | E-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 900V | 1.4V @ 1.4A | 900V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
| JANTXV1N6630US | DIODE GEN PURP 1KV 1.4A E-MELF | Microchip Technology | SQ-MELF, E | 1.4A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 1000V | 1.4V @ 1.4A | 1000V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
| JAN1N6631US | DIODE GEN PURP 1.1KV 1.4A D5B | Microchip Technology | E-MELF | 1.4A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 4µA @ 1100V | 40pF @ 10V, 1MHz | 1.6V @ 1.4A | 1100V | 60ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 |
| JANTX1N6631US | DIODE GEN PURP 1.1KV 1.4A D5B | Microchip Technology | E-MELF | 1.4A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 4µA @ 1100V | 40pF @ 10V, 1MHz | 1.6V @ 1.4A | 1100V | 60ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 |
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