• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 6
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
SICB1060P-TP SIC SCHOTTKY BARRIER , 10A ,650V Micro Commercial Co TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A (DC) Silicon Carbide Schottky Surface Mount D2PAK No Recovery Time > 500mA (Io) 44 µA @ 650 V 36pF @ 400V, 1MHz 1.6V @ 10A 650V 0ns -55°C ~ 175°C
SICU1060P-TP SIC SCHOTTKY BARRIER , 10A ,650V Micro Commercial Co TO-252-3, DPak (2 Leads + Tab), SC-63 10A (DC) Silicon Carbide Schottky Surface Mount DPAK (TO-252) No Recovery Time > 500mA (Io) 44 µA @ 650 V 452pF @ 0V, 1MHz 1.6V @ 10A 650V 0ns -55°C ~ 175°C
SICF1060P-BP SIC SCHOTTKY BARRIER , 10A ,650V Micro Commercial Co TO-220-2 Isolated Tab 10A (DC) Silicon Carbide Schottky Through Hole ITO-220AC No Recovery Time > 500mA (Io) 44 µA @ 650 V 452pF @ 0V, 1MHz 1.6V @ 10A 650V 0ns -55°C ~ 175°C
SIC1060P-BP SIC SCHOTTKY BARRIER , 10A ,650V Micro Commercial Co TO-220-2 10A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 44 µA @ 650 V 36pF @ 400V, 1MHz 1.6V @ 10A 650V 0ns -55°C ~ 175°C
SIC1060PL8-TP SIC SCHOTTKY BARRIER , 10A ,650V Micro Commercial Co 4-XQFN Exposed Pad 10A (DC) Silicon Carbide Schottky Surface Mount DFN0808A No Recovery Time > 500mA (Io) 44 µA @ 650 V 452pF @ 0V, 1MHz 1.6V @ 10A 650V 0ns -55°C ~ 175°C
SIC1060A-TP DIODE SCHOTTKY Micro Commercial Co TO-220-2 10A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 5µA @ 650V 600pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
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