• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 6
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Series
IDV15E65D2XKSA1 DIODE GEN PURP 650V 15A TO220-2 Infineon Technologies TO-220-2 15A Standard Through Hole TO-220-2 Fast Recovery =< 500ns, > 200mA (Io) 40µA @ 650V 2.2V @ 15A 650V 47ns -40°C ~ 175°C
HFA15PB60PBF DIODE GEN PURP 600V 15A TO247AC Infineon Technologies TO-247-2 15A Standard Through Hole TO-247AC Modified Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 600V 1.7V @ 15A 600V 60ns -55°C ~ 150°C HEXFRED®
IDC10D120T6MX1SA1 DIODE GEN PURP 1.2KV 15A WAFER Infineon Technologies Die 15A Standard Surface Mount Sawn on foil Standard Recovery >500ns, > 200mA (Io) 3.5µA @ 1200V 2.05V @ 15A 1200V -40°C ~ 175°C
IDP15E65D2XKSA1 DIODE GEN PURP 650V 15A TO220 Infineon Technologies TO-220-2 15A Standard Through Hole TO-220 Fast Recovery =< 500ns, > 200mA (Io) 40µA @ 650V 2.3V @ 15A 650V 47ns -40°C ~ 175°C
HFA15TB60PBF DIODE GEN PURP 600V 15A TO220AC Infineon Technologies TO-220-2 15A Standard Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 600V 1.7V @ 15A 600V 60ns -55°C ~ 150°C HEXFRED®
IDP15E65D1XKSA1 DIODE GEN PURP 650V 15A TO220-2 Infineon Technologies TO-220-2 15A Standard Through Hole TO-220-2 Fast Recovery =< 500ns, > 200mA (Io) 40µA @ 650V 1.7V @ 15A 650V 114ns -40°C ~ 175°C
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