-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRD3CH82DB6 | DIODE GEN PURP 1.2KV 150A DIE | Infineon Technologies | Die | 150A | Standard | Surface Mount | Die | Fast Recovery =< 500ns, > 200mA (Io) | 3µA @ 1200V | 2.7V @ 150A | 1200V | 355ns | -40°C ~ 150°C |
| IDC73D120T6MX1SA2 | DIODE GEN PURP 1.2KV 150A WAFER | Infineon Technologies | Die | 150A | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 26µA @ 1200V | 2.05V @ 150A | 1200V | -40°C ~ 175°C | |
| IDW100E60 | IDW100E60 - SILICON POWER DIODE | Infineon Technologies | TO-247-3 | 150A | Standard | Through Hole | PG-TO247-3 | Fast Recovery =< 500ns, > 200mA (Io) | 40µA @ 600V | 2V @ 100A | 600V | 120ns | -40°C ~ 175°C |
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