-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DZ1070N18KHPSA3 | DIODE GEN PURP 1.8KV 1100A MOD | Infineon Technologies | Module | 1100A | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 150mA @ 1800V | 1.11V @ 3000A | 1800V | -40°C ~ 150°C |
| DZ1100N22KTIMHPSA1 | THYR / DIODE MODULE DK | Infineon Technologies | Module | 1100A | Standard | Chassis Mount | BG-PB70AT-1 | Standard Recovery >500ns, > 200mA (Io) | 80mA @ 2200V | 1.11V @ 3000A | 2200V | 150°C (Max) |
| DZ1070N22KHPSA3 | DIODE GEN PURP 2.2KV 1100A MOD | Infineon Technologies | Module | 1100A | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 150mA @ 2200V | 1.11V @ 3000A | 2200V | -40°C ~ 150°C |
| DZ1100N22KHPSA2 | DIODE GEN PURP 2.2KV 1100A MOD | Infineon Technologies | Module | 1100A | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 80mA @ 2200V | 1.11V @ 3000A | 2200V | -40°C ~ 150°C |
| D1131SH65TXPSA1 | DIODE GEN PURP 6.5KV 1100A | Infineon Technologies | DO-200AE | 1100A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 150mA @ 6500V | 5.6V @ 2500A | 6500V | 0°C ~ 140°C |
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