-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|
| D1050N12TXPSA1 | DIODE GEN PURP 1.2KV 1050A | Infineon Technologies | DO-200AB, B-PUK | 1050A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 60mA @ 1200V | 1V @ 1000A | 1200V | -40°C ~ 180°C |
| D1050N18TXPSA1 | DIODE GEN PURP 1.8KV 1050A | Infineon Technologies | DO-200AB, B-PUK | 1050A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 60mA @ 1800V | 1V @ 1000A | 1800V | -40°C ~ 180°C |
| D1050N16TXPSA1 | DIODE GEN PURP 1.6KV 1050A | Infineon Technologies | DO-200AB, B-PUK | 1050A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 60mA @ 1600V | 1V @ 1000A | 1600V | -40°C ~ 180°C |
| D1050N14TXPSA1 | DIODE GEN PURP 1.4KV 1050A | Infineon Technologies | DO-200AB, B-PUK | 1050A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 60mA @ 1400V | 1V @ 1000A | 1400V | -40°C ~ 180°C |
- 10
- 15
- 50
- 100