• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 9
  • SIDC81D120E6X1SA4
    DIODE GEN PURP 1.2KV 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 100A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • SIDC26D60C6
    DIODE GEN PURP 600V 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 100A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 175°C
    Info from the market
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  • SIDC59D170HX1SA2
    DIODE GEN PURP 1.7KV 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1700V
    • Current - Average Rectified (Io): 100A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1700V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • SIDC42D60E6X1SA1
    DIODE GEN PURP 600V 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 100A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
    Info from the market
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    • Offers in stock:
  • SIDC81D120F6X1SA1
    DIODE GEN PURP 1.2KV 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 100A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 150°C
    Info from the market
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    • Offers in stock:
  • SIDC53D120H8X1SA1
    DIODE GEN PURP 1.2KV 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 100A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.97V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 175°C
    Info from the market
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    • Offers in stock:
  • SIDC53D120H6X1SA3
    DIODE GEN PURP 1.2KV 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 100A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 150°C
    Info from the market
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    • Offers in stock:
  • SIDC73D170E6X1SA2
    DIODE GEN PURP 1.7KV 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1700V
    • Current - Average Rectified (Io): 100A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2.15V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1700V
    • Operating Temperature - Junction: -40°C ~ 175°C
    Info from the market
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    • Offers in stock:
  • SIDC26D60C8X1SA1
    DIODE GEN PURP 600V 100A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 100A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 175°C
    Info from the market
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