-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIDC81D120E6X1SA4 | DIODE GEN PURP 1.2KV 100A WAFER | Infineon Technologies | Die | 100A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1200V | 1.9V @ 100A | 1200V | -55°C ~ 150°C |
| SIDC26D60C6 | DIODE GEN PURP 600V 100A WAFER | Infineon Technologies | Die | 100A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.9V @ 100A | 600V | -40°C ~ 175°C |
| SIDC59D170HX1SA2 | DIODE GEN PURP 1.7KV 100A WAFER | Infineon Technologies | Die | 100A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1700V | 1.8V @ 100A | 1700V | -55°C ~ 150°C |
| SIDC42D60E6X1SA1 | DIODE GEN PURP 600V 100A WAFER | Infineon Technologies | Die | 100A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.25V @ 100A | 600V | -55°C ~ 150°C |
| SIDC81D120F6X1SA1 | DIODE GEN PURP 1.2KV 100A WAFER | Infineon Technologies | Die | 100A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1200V | 2.1V @ 100A | 1200V | -55°C ~ 150°C |
| SIDC53D120H8X1SA1 | DIODE GEN PURP 1.2KV 100A WAFER | Infineon Technologies | Die | 100A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1200V | 1.97V @ 100A | 1200V | -40°C ~ 175°C |
| SIDC53D120H6X1SA3 | DIODE GEN PURP 1.2KV 100A WAFER | Infineon Technologies | Die | 100A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1200V | 1.6V @ 100A | 1200V | -55°C ~ 150°C |
| SIDC73D170E6X1SA2 | DIODE GEN PURP 1.7KV 100A WAFER | Infineon Technologies | Die | 100A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1700V | 2.15V @ 100A | 1700V | -40°C ~ 175°C |
| SIDC26D60C8X1SA1 | DIODE GEN PURP 600V 100A WAFER | Infineon Technologies | Die | 100A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.9V @ 100A | 600V | -40°C ~ 175°C |
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