-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G5S06508AT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology-GPT | TO-220-2 | 30.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| G5S6506Z | SIC SCHOTTKY DIODE 650V 6A DFN5* | Global Power Technology-GPT | 8-PowerTDFN | 30.5A (DC) | Silicon Carbide Schottky | Surface Mount | 8-DFN (4.9x5.75) | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.5V @ 6A | 650V | 0ns | -55°C ~ 175°C |
| G4S6508Z | SIC SCHOTTKY DIODE 650V 8A DFN5* | Global Power Technology-GPT | 8-PowerTDFN | 30.5A (DC) | Silicon Carbide Schottky | Surface Mount | 8-DFN (4.9x5.75) | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| G4S06510AT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-220-2 | 30.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
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