-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G5S12002A | SIC SCHOTTKY DIODE 1200V 2A 2-PI | Global Power Technology-GPT | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 170pF @ 0V, 1MHz | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C |
| G3S06503H | SIC SCHOTTKY DIODE 650V 3A 2-PIN | Global Power Technology-GPT | TO-220-2 Full Pack | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.7V @ 3A | 650V | 0ns | -55°C ~ 175°C |
| G3S06504H | SIC SCHOTTKY DIODE 650V 4A 2-PIN | Global Power Technology-GPT | TO-220-2 Full Pack | 10A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.7V @ 4A | 650V | 0ns | -55°C ~ 175°C |
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