-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C5D10170H | 10A, 1700V, G5 ZREC SIC SCHOTTKY | Cree/Wolfspeed | TO-247-2 | 33A (DC) | Silicon Carbide Schottky | Through Hole | TO-247-2 | No Recovery Time > 500mA (Io) | 200µA @ 1700V | 830pF @ 0V, 1MHz | 1.8V @ 10A | 1700V | 0ns | -55°C ~ 175°C | Z-Rec® |
C4D10120E | DIODE SCHOTTKY 1.2KV 10A TO252-2 | Cree/Wolfspeed | TO-252-3, DPak (2 Leads + Tab), SC-63 | 33A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | No Recovery Time > 500mA (Io) | 250µA @ 1200V | 754pF @ 0V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | Z-Rec® |
C4D10120E-TR | DIODE SCHOTTKY 1.2KV 33A TO252-2 | Cree/Wolfspeed | TO-252-3, DPak (2 Leads + Tab), SC-63 | 33A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | No Recovery Time > 500mA (Io) | 250µA @ 1200V | 754pF @ 0V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | Z-Rec® |
E4D10120A | E SERIES, 10 AMP, 1200V G4 SCHOT | Cree/Wolfspeed | TO-220-2 | 33A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 200µA @ 1200V | 777pF @ 0V, 1MHz | 1.8V @ 10A | 1200V | -55°C ~ 175°C | Automotive, AEC-Q101, E | |
C4D10120A | DIODE SCHOTTKY 1.2KV 10A TO220-2 | Cree/Wolfspeed | TO-220-2 | 33A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 250µA @ 1200V | 754pF @ 0V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | Z-Rec® |
- 10
- 15
- 50
- 100