-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EGP30A-TP | DIODE GEN PURP 50V 3A DO201AE | Micro Commercial Co | DO-201AE, Axial | 3A | Standard | Through Hole | DO-201AE | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 50V | 1V @ 3A | 50V | 50ns | -55°C ~ 150°C |
EGP30B-TP | DIODE GEN PURP 100V 3A DO201AE | Micro Commercial Co | DO-201AE, Axial | 3A | Standard | Through Hole | DO-201AE | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 100V | 1V @ 3A | 100V | 50ns | -55°C ~ 150°C |
EGP30F-TP | DIODE GEN PURP 300V 3A DO201AE | Micro Commercial Co | DO-201AE, Axial | 3A | Standard | Through Hole | DO-201AE | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 300V | 1.25V @ 3A | 300V | 50ns | -55°C ~ 150°C |
EGP30G-TP | DIODE GEN PURP 400V 3A DO201AE | Micro Commercial Co | DO-201AE, Axial | 3A | Standard | Through Hole | DO-201AE | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 400V | 1.25V @ 3A | 400V | 50ns | -55°C ~ 150°C |
EGP30D-TP | DIODE GEN PURP 200V 3A DO201AE | Micro Commercial Co | DO-201AE, Axial | 3A | Standard | Through Hole | DO-201AE | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 200V | 1V @ 3A | 200V | 50ns | -55°C ~ 150°C |
- 10
- 15
- 50
- 100