-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DNA30E2200FE | DIODE GEN PURP 2.2KV 30A I4PAC | IXYS | TO-251-2, IPak | 30A | Standard | Through Hole | i4-PAC™ | Standard Recovery >500ns, > 200mA (Io) | 40µA @ 2200V | 7pF @ 700V, 1MHz | 1.25V @ 30A | 2200V | -55°C ~ 175°C | ||||
| DSEE55-24N1F | DIODE ARRAY GP 1200V 60A I4PAC | IXYS | i4-Pac™-3 | Standard | Through Hole | i4-PAC™ | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 1200V | 2.45V @ 60A | 1200V | 220ns | -55°C ~ 175°C | 1 Pair Series Connection | 60A | HiPerFRED™ | ||
| DHH55-36N1F | DIODE ARRAY GP 1800V 60A I4PAC | IXYS | i4-Pac™-3 | Standard | Through Hole | i4-PAC™ | Fast Recovery =< 500ns, > 200mA (Io) | 200µA @ 1800V | 2.04V @ 60A | 1800V | 230ns | -55°C ~ 150°C | 1 Pair Series Connection | 60A |
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